Dynamics of localized excitons in InGaN/GaN quantum wells
نویسندگان
چکیده
منابع مشابه
Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms
We have used spatially and temporally resolved cathodoluminescence CL to study the carrier recombination dynamics of InGaN quantum wells QWs grown on 0001 -oriented planar GaN and 11̄01 -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and ...
متن کاملCarrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells
We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi’s golden rule and Saha’s equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bim...
متن کاملCarrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy
Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% o...
متن کاملRecombination Pathways in Green InGaN/GaN Multiple Quantum Wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow ...
متن کاملEmission dynamics of red emitting InGaN/GaN single quantum wells
Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through timeresolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time afte...
متن کامل